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IEC 63284 Ed. 1.0 b:2022

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IEC 63284 Ed. 1.0 b:2022 Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors

standard by International Electrotechnical Commission, 04/01/2022

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This document covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress.

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Edition: 1.0 Published: 04/01/2022 ISBN(s): 9782832211016 Number of Pages: 30 File Size: 1 file , 970 KB Note: This product is unavailable in Belarus, Russia, Ukraine